Product overview
- Product number
- BAS316,H3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 100V 250MA USC
Documents and media
- Datasheets
- BAS316,H3F
Product Details
- Capacitance @ Vr, F :
- 0.35pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 250mA
- Current - Reverse Leakage @ Vr :
- 200 nA @ 80 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 150°C (Max)
- Package / Case :
- SC-76, SOD-323
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 3 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- USC
- Voltage - DC Reverse (Vr) (Max) :
- 100 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.25 V @ 150 mA
product description
DIODE GEN PURP 100V 250MA USC
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