Product overview
- Product number
- TRS6E65F,S1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Diodes - Rectifiers - Single
- product description
- DODE SCHOTTKY 650V TO220
Documents and media
- Datasheets
- TRS6E65F,S1Q
Product Details
- Capacitance @ Vr, F :
- 22pF @ 650V, 1MHz
- Current - Average Rectified (Io) :
- 6A (DC)
- Current - Reverse Leakage @ Vr :
- 30 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- TO-220-2
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-220-2L
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 6 A
product description
DODE SCHOTTKY 650V TO220
