Product overview
- Product number
- 1SS307(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 30V 100MA SMINI
Documents and media
- Datasheets
- 1SS307(TE85L,F)
Product Details
- Capacitance @ Vr, F :
- 6pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 100mA
- Current - Reverse Leakage @ Vr :
- 10 µA @ 30 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 125°C (Max)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- S-Mini
- Voltage - DC Reverse (Vr) (Max) :
- 30 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3 V @ 100 mA
product description
DIODE GEN PURP 30V 100MA SMINI
Purchases and prices
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