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Product overview

Product number
DS1230AB-200IND
Manufacturer
Rochester Electronics
Catalog
Memory
product description
IC NVSRAM 256KBIT PAR 28EDIP

Documents and media

Datasheets
DS1230AB-200IND

Product Details

Access Time :
200 ns
Clock Frequency :
-
Memory Format :
NVSRAM
Memory Interface :
Parallel
Memory Size :
256Kb (32K x 8)
Memory Type :
Non-Volatile
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 85°C (TA)
Part Status :
Obsolete
Supplier Device Package :
28-EDIP
Technology :
NVSRAM (Non-Volatile SRAM)
Voltage - Supply :
4.75V ~ 5.25V
Write Cycle Time - Word, Page :
200ns

product description

IC NVSRAM 256KBIT PAR 28EDIP

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