Product overview
- Product number
- 1N5553US
- Manufacturer
- Microchip Technology
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 800V 3A B-MELF
Documents and media
- Datasheets
- 1N5553US
Product Details
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 1 µA @ 800 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- SQ-MELF, B
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 2 µs
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- B, SQ-MELF
- Voltage - DC Reverse (Vr) (Max) :
- 800 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.2 V @ 9 A
product description
DIODE GEN PURP 800V 3A B-MELF
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