Product overview
- Product number
- IDK10G120C5XTMA1
- Manufacturer
- Infineon Technologies
- Catalog
- Diodes - Rectifiers - Single
- product description
- SIC DISCRETE
Documents and media
- Datasheets
- IDK10G120C5XTMA1
Product Details
- Capacitance @ Vr, F :
- 525pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 31.9A (DC)
- Current - Reverse Leakage @ Vr :
- 18 µA @ 1200 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- PG-TO263-2-1
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.8 V @ 10 A
product description
SIC DISCRETE
Purchases and prices
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