Product overview
- Product number
- TPAR3J S1G
- Manufacturer
- Taiwan Semiconductor
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE AVALANCHE 600V 3A TO277A
Documents and media
- Datasheets
- TPAR3J S1G
Product Details
- Capacitance @ Vr, F :
- 58pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Avalanche
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-277, 3-PowerDFN
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 120 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- TO-277A (SMPC)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.55 V @ 3 A
product description
DIODE AVALANCHE 600V 3A TO277A
