Product overview
- Product number
- MSRT200100(A)D
- Manufacturer
- GeneSiC Semiconductor
- Catalog
- Diodes - Rectifiers - Arrays
- product description
- DIODE GEN 1KV 200A 3 TOWER
Documents and media
- Datasheets
- MSRT200100(A)D
Product Details
- Current - Average Rectified (Io) (per Diode) :
- 200A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 1000 V
- Diode Configuration :
- 1 Pair Series Connection
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- Three Tower
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Three Tower
- Voltage - DC Reverse (Vr) (Max) :
- 1000 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 200 A
product description
DIODE GEN 1KV 200A 3 TOWER
