Product overview
- Product number
- MURTA20060
- Manufacturer
- GeneSiC Semiconductor
- Catalog
- Diodes - Rectifiers - Arrays
- product description
- DIODE GEN PURP 600V 100A 3 TOWER
Documents and media
- Datasheets
- MURTA20060
Product Details
- Current - Average Rectified (Io) (per Diode) :
- 100A
- Current - Reverse Leakage @ Vr :
- 25 µA @ 600 V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- Three Tower
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Three Tower
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 100 A
product description
DIODE GEN PURP 600V 100A 3 TOWER
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