Product overview
- Product number
- MBR12035CT
- Manufacturer
- GeneSiC Semiconductor
- Catalog
- Diodes - Rectifiers - Arrays
- product description
- DIODE MODULE 35V 120A 2TOWER
Documents and media
- Datasheets
- MBR12035CT
Product Details
- Current - Average Rectified (Io) (per Diode) :
- 120A (DC)
- Current - Reverse Leakage @ Vr :
- 3 mA @ 20 V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Schottky
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- Twin Tower
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- Twin Tower
- Voltage - DC Reverse (Vr) (Max) :
- 35 V
- Voltage - Forward (Vf) (Max) @ If :
- 650 mV @ 120 A
product description
DIODE MODULE 35V 120A 2TOWER
Purchases and prices
Recommended Products
You may be looking for
TBJD475K050LBDC0824
Q-030480005072i
CWR26MK106KCHC\TR
395-122-544-888
06033C102KAZ2A
Q-1Z04B00010.5M
Q-0E02F0008072i
C0805X684K4REC7210
357-054-522-212
CWR26HK106KCFB
C0805X333M1REC7210
Q-0D00D0005072i
CWR09FB685JCC
395-053-541-103
392-102-542-203
C0805X473K5REC7210
CWR26MB106KBHC
Q-0A031000H024i
CWR26MH106KCHC\TR
395-122-523-578
