Product overview
- Product number
- DCD010-TB-E
- Manufacturer
- Rochester Electronics
- Catalog
- Diodes - Rectifiers - Arrays
- product description
- SILICON EPITAXIAL DIODE
Documents and media
- Datasheets
- DCD010-TB-E
Product Details
- Current - Average Rectified (Io) (per Diode) :
- 100mA
- Current - Reverse Leakage @ Vr :
- 100 nA @ 15 V
- Diode Configuration :
- 1 Pair Series Connection
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 125°C (Max)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- -
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- 3-CP
- Voltage - DC Reverse (Vr) (Max) :
- 20 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 10 mA
product description
SILICON EPITAXIAL DIODE
