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Product overview

Product number
NXPSC20650W-AQ
Manufacturer
WeEn Semiconductors Co., Ltd
Catalog
Diodes - Rectifiers - Arrays
product description
SILICON CARBIDE POWER DIODE

Documents and media

Datasheets
NXPSC20650W-AQ

Product Details

Current - Average Rectified (Io) (per Diode) :
20A
Current - Reverse Leakage @ Vr :
60 µA @ 650 V
Diode Configuration :
1 Pair Common Cathode
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-247-3
Part Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-247-3
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 10 A

product description

SILICON CARBIDE POWER DIODE

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