Product overview
- Product number
- TRS16N65FB,S1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Diodes - Rectifiers - Arrays
- product description
- SIC SBD TO-247 V=650 IF=12A
Documents and media
- Datasheets
- TRS16N65FB,S1Q
Product Details
- Current - Average Rectified (Io) (per Diode) :
- 8A (DC)
- Current - Reverse Leakage @ Vr :
- 40 µA @ 650 V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-247
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 8 A
product description
SIC SBD TO-247 V=650 IF=12A
