Datasheets

DG636EEQ-T1-GE3

-3db Bandwidth :

700MHz

Channel Capacitance (CS(off), CD(off)) :

3.7pF, 4.4pF

Channel-to-Channel Matching (ΔRon) :

300mOhm

Charge Injection :

-0.33pC

Crosstalk :

-62dB @ 1MHz

Current - Leakage (IS(off)) (Max) :

1nA

Mounting Type :

Surface Mount

Multiplexer/Demultiplexer Circuit :

2:1

Number of Circuits :

2

On-State Resistance (Max) :

96Ohm

Operating Temperature :

-40°C ~ 125°C (TA)

Part Status :

Active

Supplier Device Package :

16-TSSOP

Switch Circuit :

SPDT

Switch Time (Ton, Toff) (Max) :

46ns, 55ns

Voltage - Supply, Dual (V±) :

±3V ~ 8V

Voltage - Supply, Single (V+) :

3V ~ 16V