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Product overview

Product number
NJG1812ME4-TE1
Manufacturer
Nisshinbo Micro Devices
Catalog
RF Switches
product description
HIGH POWERDPDT SWITCH GAAS MMIC

Documents and media

Datasheets
NJG1812ME4-TE1

Product Details

Circuit :
DPDT
Features :
DC Blocked
Frequency Range :
3GHz
IIP3 :
-
Impedance :
50Ohm
Insertion Loss :
0.45dB
Isolation :
17dB
Operating Temperature :
-40°C ~ 105°C
P1dB :
-
Package / Case :
12-XFQFN Exposed Pad
Part Status :
Active
RF Type :
CDMA, GSM, LTE, UMTS
Supplier Device Package :
12-EQFN (2x2)
Test Frequency :
2.7GHz
Topology :
-
Voltage - Supply :
2.4V ~ 5V

product description

HIGH POWERDPDT SWITCH GAAS MMIC

Purchases and prices

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