- Manufacturer：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Reverse Recovery Time (trr)：
-
- Voltage - Collector Emitter Breakdown (Max)：
-
- IGBT Type：
-
- Vce(on) (Max) @ Vge, Ic：
-
- Switching Energy：
-
- Gate Charge：
-
- Td (on/off) @ 25°C：
-
5 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | D-IGBT TO-247 VCES=... |
1 |
120
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | IGBT 1200V-X TO247 TU... |
450 |
3,000
In-stock
|
Get Quote |
