- Manufacturer:
-
- onsemi (4)
- Part Status:
-
- Operating Temperature:
-
- Input Type:
-
- Supplier Device Package:
-
- Reverse Recovery Time (trr):
-
- Voltage - Collector Emitter Breakdown (Max):
-
- IGBT Type:
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- Vce(on) (Max) @ Vge, Ic:
-
- Switching Energy:
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- Gate Charge:
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- Td (on/off) @ 25°C:
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14 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
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STMicroelectronics | TRENCH GATE FIEL... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | IGBT 430V 10A TO252AA |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
STMicroelectronics | IGBT 1200V 10A 75W DP... |
2,500 |
3,000
In-stock
|
Get Quote | ||
![]() |
Alpha and Omega Semiconductor, Inc. | IGBT 650V 5A TO252 |
1 |
1,458
In-stock
|
Get Quote | ||
![]() |
onsemi | IGBT 1200V 5A FS3 DP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Alpha and Omega Semiconductor, Inc. | IGBT 650V 5A TO252 |
2,500 |
3,000
In-stock
|
Get Quote | ||
![]() |
Alpha and Omega Semiconductor, Inc. | IGBT 5A 650V TO252 |
2,500 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | IGBT, 430V, 10A, 1.95V,... |
2,500 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | IGBT 430V 10A 130W TO... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
STMicroelectronics | IGBT 600V 10A 50W DPA... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
STMicroelectronics | IGBT 1200V 10A 55W DP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | IGBT 600V 10A 60W TO2... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Renesas Electronics Corporation | IGBT 600V 5A |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Renesas Electronics Corporation | IGBT 600V 5A |
1 |
3,000
In-stock
|
Get Quote |