- Power - Max：
-
- Supplier Device Package：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
32 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
NXP Semiconductors | MOSFET 2N-CH 30V 0.1... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | MOSFET 2N-CH 30V 0.7... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET 2N-CH 30V 0.7... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 50V 0.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 0.6... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 0.6... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 0.6... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 20V 1.1... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 20V 1.3... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 30V 1.3... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 30V 1.3... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 20V 1.3... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 0.1... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET 2 N-CH 60V 17... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | INTEGRATED CIRCU... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 0.6... |
3,060 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 30V 0.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 30V 0.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2N-CH 30V 1.3... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 25V 0.2... |
1 |
3,000
In-stock
|
Get Quote |
