- Power - Max：
-
- FET Feature：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
37 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Rochester Electronics | HEXFET POWER MOS... |
355 |
3,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET 2N-CH 30V 6.3... |
1,087 |
3,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET 2N-CH 20V 10.... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET 2N-CH 30V 10.... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 30V 9.5... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2 N-CH 30V 6.... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2 N-CH 30V 6.... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 10A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 10A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 3.5... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 7A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 6.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 6.6... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 3.5... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 6.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 6.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 3.5... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 7A... |
1 |
3,000
In-stock
|
Get Quote |
