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Power - Max:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
TPCP8203(TE85L,F) Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 40V 4.7...
1
RFQ
3,000
In-stock
Get Quote
TPC8211(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 5.5...
1
RFQ
3,000
In-stock
Get Quote
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