- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Part Status : Active
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 2.2 kOhms
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Supplier Device Package : DFN1006-3
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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Rochester Electronics | NOW NEXPERIA PDT... |
12,500 |
3,000
In-stock
|
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