- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SMT3; MPAK
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Resistor - Base (R1) : 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5mA, 5V
- Transistor Type : PNP - Pre-Biased
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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NXP Semiconductors | TRANS PREBIAS PN... |
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