- Vce Saturation (Max) @ Ib, Ic：
-
- DC Current Gain (hFE) (Min) @ Ic, Vce：
-
- Resistor - Base (R1)：
-
- Filter：
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Part Status : Obsolete
5 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
NXP Semiconductors | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote |
