- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : TO-236AB
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
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