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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Rochester Electronics
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Supplier Device Package : DFN1006-3
- Resistor - Base (R1) : 2.2 kOhms
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Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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Rochester Electronics | NOW NEXPERIA PDT... |
10,000 |
3,000
In-stock
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