- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Rochester Electronics
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Supplier Device Package : DFN1006-3
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
2 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
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Rochester Electronics | NOW NEXPERIA PDT... |
10,000 |
3,000
In-stock
|
Get Quote | ||
![]() |
Rochester Electronics | NOW NEXPERIA PDT... |
1,666 |
3,000
In-stock
|
Get Quote |