- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Resistor - Base (R1) : 22 kOhms
- Part Status : Active
- Supplier Device Package : DFN1006-3
2 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Rochester Electronics | NOW NEXPERIA PDT... |
13,816 |
3,000
In-stock
|
Get Quote | ||
![]() |
Rochester Electronics | NOW NEXPERIA PDT... |
12,500 |
3,000
In-stock
|
Get Quote |