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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Rochester Electronics
- Power - Max : 250 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Current - Collector Cutoff (Max) : 1µA
- Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
- Frequency - Transition : -
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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Rochester Electronics | NOW NEXPERIA PDT... |
10,000 |
3,000
In-stock
|
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