Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type：

Vce Saturation (Max) @ Ib, Ic：

Current - Collector Cutoff (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Frequency - Transition：

Resistor - Emitter Base (R2)：

Filter：

5 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1114MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	8,000	PDF RFQ	3,000 In-stock	Get Quote
RN2114MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	8,000	PDF RFQ	3,000 In-stock	Get Quote
RN2119MFV(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	3,000 In-stock	Get Quote
RN2119MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	7,860 In-stock	Get Quote
RN1119MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	8,000	PDF RFQ	3,000 In-stock	Get Quote

1 / 1 Page, 5 Records