- Manufacturer:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Part Status : Active
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Transistor Type : PNP - Pre-Biased
- Frequency - Transition : 200 MHz
5 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
3,000 |
3,000
In-stock
|
Get Quote | ||
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NTE Electronics, Inc. | T-PNP SI WITH 22K R... |
3 |
1,650
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
3,000 |
3,000
In-stock
|
Get Quote |