- Transistor Type：
-
- Vce Saturation (Max) @ Ib, Ic：
-
- Resistor - Base (R1)：
-
- Filter：
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Part Status : Active
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Frequency - Transition : -
- Current - Collector Cutoff (Max) : 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
6 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q NPN Q1B... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
319
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
315
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
8,000 |
3,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
8,000 |
3,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote |
