- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Part Status : Active
- Current - Collector (Ic) (Max) : 100 mA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Supplier Device Package : VESM
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Transistor Type : NPN - Pre-Biased
- Resistor - Base (R1) : 47 kOhms
3 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q NPN Q1B... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
8,000 |
3,000
In-stock
|
Get Quote |