- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Part Status : Active
- Transistor Type : PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Base (R1) : 10 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 320 mW
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
1 |
4,811
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