Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max：

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Transistor Type：

Voltage - Collector Emitter Breakdown (Max)：

Vce Saturation (Max) @ Ib, Ic：

Current - Collector Cutoff (Max)：

Frequency - Transition：

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7 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN2307,LF	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	3,275 In-stock	Get Quote
RN1307,LXHF	Toshiba Electronic Devices and Storage Corporation	AUTO AEC-Q SINGLE...	1	PDF RFQ	3,000 In-stock	Get Quote
MMDT5214W	Diotec Semiconductor	DIGITAL TR SOT-323...	30	PDF RFQ	3,000 In-stock	Get Quote
RN2307(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	306 In-stock	Get Quote
RN2307,LXHF	Toshiba Electronic Devices and Storage Corporation	AUTO AEC-Q TR PNP...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1307,LF	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	3,000	PDF RFQ	3,000 In-stock	Get Quote
MMDT5114W	DComponents	DI Trst. 50V, 100mA	1	PDF RFQ	3,000 In-stock	Get Quote

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