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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- ROHM Semiconductor
- Resistor - Emitter Base (R2) : 47 kOhms
- Resistor - Base (R1) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 150 mW
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Transistor Type : PNP - Pre-Biased
- Supplier Device Package : EMT3
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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ROHM Semiconductor | TRANS PREBIAS PN... |
1 |
1,980
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