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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 4.7 kOhms
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
- Transistor Type : NPN - Pre-Biased
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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NXP Semiconductors | TRANS PREBIAS NP... |
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3,000
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