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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Infineon Technologies
- Resistor - Emitter Base (R2) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 4.7 kOhms
- Transistor Type : NPN - Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Supplier Device Package : PG-SOT23
2 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Infineon Technologies | TRANS PREBIAS NP... |
40,000 |
3,000
In-stock
|
Get Quote | |||
Infineon Technologies | TRANS PREBIAS NP... |
1 |
138,650
In-stock
|
Get Quote |