- Transistor Type:
-
- Frequency - Transition:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Power - Max : 200 mW
- Resistor - Base (R1) : 4.7 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Part Status : Not For New Designs
4 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Infineon Technologies | TRANS PREBIAS NP... |
40,000 |
3,000
In-stock
|
Get Quote | |||
Infineon Technologies | TRANS PREBIAS PN... |
12,500 |
3,000
In-stock
|
Get Quote | |||
Infineon Technologies | TRANS PREBIAS PN... |
8,000 |
3,000
In-stock
|
Get Quote | |||
Infineon Technologies | TRANS PREBIAS NP... |
1 |
138,650
In-stock
|
Get Quote |