- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Power - Max : 250 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
- Supplier Device Package : DFN1006-3
3 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Rochester Electronics | NOW NEXPERIA PDT... |
13,816 |
3,000
In-stock
|
Get Quote | |||
Rochester Electronics | NOW NEXPERIA PDT... |
12,500 |
3,000
In-stock
|
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Rochester Electronics | 0.1A, 50V, NPN |
8,334 |
3,000
In-stock
|
Get Quote |