- Transistor Type:
-
- Frequency - Transition:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector (Ic) (Max) : 100 mA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
- Resistor - Base (R1) : 2.2 kOhms
- Current - Collector Cutoff (Max) : 500nA
5 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
1 |
6,727
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
21,295
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q NPN Q1B... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q PNP Q1B... |
1 |
3,000
In-stock
|
Get Quote |