Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Resistor - Base (R1)：

Filter：

4 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1103CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1109CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1103ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1109ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	3,000 In-stock	Get Quote

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