- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Resistor - Base (R1) : 2.2 kOhms
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Transistor Type : PNP - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
4 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
1 |
2,790
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q PNP Q1B... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
3,000 |
3,000
In-stock
|
Get Quote |