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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Resistor - Base (R1) : 2.2 kOhms
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Transistor Type : PNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max) : 50 V
2 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
3,000 |
3,000
In-stock
|
Get Quote |