- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- ROHM Semiconductor
- Frequency - Transition : 250 MHz
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
- Transistor Type : NPN - Pre-Biased
- Power - Max : 200 mW
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
ROHM Semiconductor | TRANS PREBIAS NP... |
1 |
2,360
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