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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Transistor Type : NPN - Pre-Biased
- Package / Case : TO-236-3, SC-59, SOT-23-3
3 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
5,824
In-stock
|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1 |
2,601
In-stock
|
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q TR NPN... |
1 |
3,000
In-stock
|
Get Quote |