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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 10 kOhms
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
1 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
8,000 |
3,000
In-stock
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