- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Power - Max : 200 mW
- Supplier Device Package : S-Mini
- Transistor Type : NPN - Pre-Biased
4 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
3,000 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
3,000 |
3,000
In-stock
|
Get Quote |