- Frequency - Transition:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Resistor - Emitter Base (R2) : 47kOhms
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Package / Case : SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Resistor - Base (R1) : 22kOhms
3 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BS... |
4,000 |
8,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q TR NPN... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q 2-IN-1 (P... |
1 |
3,000
In-stock
|
Get Quote |