- Frequency - Transition:
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- Filter:
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- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Resistor - Base (R1) : 10kOhms
- Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Package / Case : SOT-563, SOT-666
- Part Status : Active
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
4 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | NPN + PNP BRT Q1BS... |
4,000 |
8,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | PNP + NPN BRT Q1BS... |
3,000 |
6,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q 2-IN-1 (P... |
1 |
3,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q TR NPN... |
1 |
3,000
In-stock
|
Get Quote |