Product overview
- Product number
- IRF7495PBF
- Manufacturer
- Rochester Electronics
- product description
- HEXFET POWER MOSFET
Documents and media
- Datasheets
- IRF7495PBF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1530 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power Dissipation (Max) :
- 2.5W (Ta)
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 4.4A, 10V
- Supplier Device Package :
- 8-SO
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
HEXFET POWER MOSFET
